发明名称 METHOD AND APPARATUS FOR CLEANING REACTION CHAMBER
摘要 PURPOSE:To thoroughly remove contaminants such as by-products of reaction in a short period and to clean a reaction chamber for film formation by evacuating the inside of the reaction chamber and blowing a gas to the surfaces deposited with the contaminants. CONSTITUTION:The contaminants such as fine powder polysilane as the by- products stick to the surface of a high-frequency electrode on the inside surface of the reaction chamber 1 in the stage of forming an amorphous silicon film, etc. on a substrate in the chamber 1. A gas supply device 2 for cleaning is inserted into the chamber 1 for removing the contaminants and the gas for cleaning such as N2 or Ar is introduced into the chamber through a supply port 26 so as to be blown from plural gas ejection ports 22 provided to a gas blow part 21 in the lower part through plural pieces of gas pipes 21 toward the inside surface of the electrode 4 deposited with the contaminants. The contaminants are thereby dislodged from the wall and are discharged together with the gas from a discharge port 8. The part 21 is vertically and rotationally moved by means of a motor 3, by which the contaminants are thoroughly removed from the entire inside surface of the electrode 4.
申请公布号 JPS621888(A) 申请公布日期 1987.01.07
申请号 JP19850140397 申请日期 1985.06.28
申请人 CANON INC 发明人 ARAI TAKASHI;KIMURA TOMOHIRO;MURAKAMI TSUTOMU;KAWAMURA TAKAHISA;KOIKE ATSUSHI
分类号 G03G5/08;C23F4/00;C23G5/00;H01L21/205;H01L21/302;H01L21/3065;H01L31/0248 主分类号 G03G5/08
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