发明名称 |
METHOD AND APPARATUS FOR CLEANING REACTION CHAMBER |
摘要 |
PURPOSE:To thoroughly remove contaminants such as by-products of reaction in a short period and to clean a reaction chamber for film formation by evacuating the inside of the reaction chamber and blowing a gas to the surfaces deposited with the contaminants. CONSTITUTION:The contaminants such as fine powder polysilane as the by- products stick to the surface of a high-frequency electrode on the inside surface of the reaction chamber 1 in the stage of forming an amorphous silicon film, etc. on a substrate in the chamber 1. A gas supply device 2 for cleaning is inserted into the chamber 1 for removing the contaminants and the gas for cleaning such as N2 or Ar is introduced into the chamber through a supply port 26 so as to be blown from plural gas ejection ports 22 provided to a gas blow part 21 in the lower part through plural pieces of gas pipes 21 toward the inside surface of the electrode 4 deposited with the contaminants. The contaminants are thereby dislodged from the wall and are discharged together with the gas from a discharge port 8. The part 21 is vertically and rotationally moved by means of a motor 3, by which the contaminants are thoroughly removed from the entire inside surface of the electrode 4. |
申请公布号 |
JPS621888(A) |
申请公布日期 |
1987.01.07 |
申请号 |
JP19850140397 |
申请日期 |
1985.06.28 |
申请人 |
CANON INC |
发明人 |
ARAI TAKASHI;KIMURA TOMOHIRO;MURAKAMI TSUTOMU;KAWAMURA TAKAHISA;KOIKE ATSUSHI |
分类号 |
G03G5/08;C23F4/00;C23G5/00;H01L21/205;H01L21/302;H01L21/3065;H01L31/0248 |
主分类号 |
G03G5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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