| 摘要 |
Process for depositing a silicon-based coating of uniform thickness on a metal article by plasma-assisted chemical deposition from a gas, in which the metal articles are placed in an enclosure containing a gas capable of generating, under the effect of an electrical current between electrodes placed in the said enclosure, reactive species containing the elements of the silicon-based coating which will be deposited on the metal articles heated to a temperature above room temperature. The temperature of the gas at the metallic articles is between 300 DEG C and 450 DEG C, the gas pressure is lower than 10 mbar but higher than 0.1 mbar and the articles are arranged on the anode and in electrical contact with the latter, facing the cathode. Application: deposition of a hard and uniform surface layer on steel articles. <IMAGE>
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