发明名称 METHOD FOR SELF-DIAGNOSIS FOR PROBE CARD
摘要 PURPOSE:To enable a probe card to accomplish a timely diagnosis of its own performance characteristics with ease and accuracy by a method wherein a semiconductor wafer with its upper surface completely covered with an aluminum film comes onto the stage during an interrupted measuring process and the contact resistance is determined of the probes belonging to the probe card. CONSTITUTION:A semiconductor wafer, with its upper surface coated with an aluminum film formed by evaporation, is kept in a stand-by status at a special station in, for example, an auto-loader section, for the test of a probe card. In a case where the number of unacceptable chips detected in succession is larger than the quantity designated beforehand, the wafer prober automatically causes said aluminum-coated semiconductor test wafer to come onto the specimen platform on a stage in place of a production chip. The wafer prober next causes the stage to move until the probing needles of the probing card are in contact with the upper surface of the test wafer. A curent is caused to flow across specified probing needles for the measurement of contact resistance. The measurement is repeated several times for different test points. The outcome is supplied to the computer controlling the wafer prober. The computer checks the performance characteristics including quality, stability, etc. of the probe card and the measurement of chips are stopped with the probe card is judged to be out of order.
申请公布号 JPS61295641(A) 申请公布日期 1986.12.26
申请号 JP19850138236 申请日期 1985.06.25
申请人 TOSHIBA CORP 发明人 MITSUDA FUMIAKI
分类号 H01L21/66 主分类号 H01L21/66
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