| 摘要 |
PURPOSE:To increase alpha-ray resistant strength by forming a load resistor constituting an emitter-coupled type memory cell by a low-concentration semiconductor region, oppositely facing a conductive layer to the low-concentration semiconductor region through an insulating film and applying data-line potential to the conductive layer. CONSTITUTION:When the potential Vx of a word line W is changed into potential higher than reading reference voltage Vref on reading, the potential VC0, VC1 of nodes n1 and n2 starts their own rises, and column switches Qy, Qy on a pair of data lines D, -D are turned ON. The potential of the data lines D, D is brought to potential lower than one reference voltage Vref only by a VBE section and the transistor side through which the other reading currents are flowed to potential lower than the potential VC1 of the node on the high potential side only by a VBE section. Consequently, the potential of a gate electrode 15a for load resistors R1, R2 is brought to minus potential to the potential VC1 of a P<+> type semiconductor region 9. As a result, a channel is formed to the surface of a P<-> type semiconductor region 12, and the resistance values of the load resistors R1, R2 are reduced. Accordingly, a margin for a memory cell is extended, thus increasing alpha-ray resistant strength. |
