| 摘要 |
PURPOSE:To form both of a phase shift layer removed at openings and that remaining there with one time of exposure by exposing a resist film applied onto a light shading film with exposure energy partly different, and forming a resist pattern different in thickness between the phase shift layer at the openings to be removed and at those to be left as it is. CONSTITUTION:An SiO2 film 2 is vapor deposited on a glass base 1, the light shading film 3 of Cr is vapor deposited on the film 2, and it is coated with the resist 6. It is exposed to light having the pattern of the openings, with a different exposure energy at each part of the pattern, resulting in perfectly removing the pattern parts 4-2, 4-4 of the resist pattern after development processing, and reducing the film thickness to about their halves at the pattern parts 4-1, 4-3, 4-5. The openings 4-2, 4-4 are formed by etching the Cr layer 3 and further etching the SiO2 layer 2 with diluted HF, and the remaining resist is vertically dry etched to reduce the film thickness to remove the resist of the pattern parts 4-1, 4-3, 4-5, and the Cr layer 3 is again etched and finally, all the resist remaining on the surface is removed. |
