摘要 |
PURPOSE:To obtain a preferable sole longitudinal mode oscillation by providing a neck having a reflecting surface parallel to a resonator to perpendicularly reflect part of a laser light in a striped active layer substantially at the center of the striped active layer. CONSTITUTION:An N type InP clad layer 2, an N type InGaAsP active layer 3, a P type InP clad layer 4, and a P type InGaAsP cap layer 5 are continuously grown on an N type InP substrate 1. Then, a striped mesa structure having a neck 10 having a surface parallel to a resonator surface is formed. Then, a P type InP layer 6, an N type InP layer 7 are grown as a current blocking layer. Part of the laser light in the layer 3 is repeatedly reflected on the resonator surface 11 of the both ends of the resonator by the neck 10 of the width W2 (<W1), and partly repeatedly reflected on the reflecting surface parallel to the resonator surface 12 formed on the neck 10. Thus, preferable sole longitudinal mode oscillation is obtained by the inner reflection interference effect. |