发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To obtain a preferable sole longitudinal mode oscillation by providing a neck having a reflecting surface parallel to a resonator to perpendicularly reflect part of a laser light in a striped active layer substantially at the center of the striped active layer. CONSTITUTION:An N type InP clad layer 2, an N type InGaAsP active layer 3, a P type InP clad layer 4, and a P type InGaAsP cap layer 5 are continuously grown on an N type InP substrate 1. Then, a striped mesa structure having a neck 10 having a surface parallel to a resonator surface is formed. Then, a P type InP layer 6, an N type InP layer 7 are grown as a current blocking layer. Part of the laser light in the layer 3 is repeatedly reflected on the resonator surface 11 of the both ends of the resonator by the neck 10 of the width W2 (<W1), and partly repeatedly reflected on the reflecting surface parallel to the resonator surface 12 formed on the neck 10. Thus, preferable sole longitudinal mode oscillation is obtained by the inner reflection interference effect.
申请公布号 JPS60165781(A) 申请公布日期 1985.08.28
申请号 JP19840022105 申请日期 1984.02.08
申请人 MATSUSHITA DENKI SANGYO KK 发明人 HIRAYAMA NORIYUKI;OOSHIMA MASAAKI;TAKENAKA NAOKI;KINO YUKIHIRO
分类号 H01S5/00;H01S5/10;H01S5/227 主分类号 H01S5/00
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