| 摘要 |
PURPOSE:To enable to form a deposited film at a high-deposition rate by a method wherein low-reactivity halogn radicals are converted into high-reactivity radicals. CONSTITUTION:A halogen radical introducing tube 10 and a hydrogen radical introducing tube 31 are provided in a deposition chamber 30, halogen radicals and hydrogen radicals are introduced in the deposition chamber 30 through both the introducing tubes 19 and 31 and an A-Si film is formed on a carrier 36 being held on a carrier holder 32. A gas bomb 11 holding the raw gas to be used for forming the SiF2 radicals, such as SiF4 gas is controlled by a gas controller 12 in the desired pressure.
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