| 摘要 |
PURPOSE:To improve the output of a light emitting diode, by making the burying layer an N-type, and making the carrier density below 5X10<15>cm<-3>. CONSTITUTION:On an N-type InP substrate 1, an N-type InP layer 2 having a layer thickness of about 5mum and a carrier density of 1X10<15>cm<-3>, an undoped InGaAsP active layer 3 of a layer thickness of 1.5mum, and a P-type InP layer 4 having a layer thickness of 1mum and a carrier density of 5X10<18>cm<-3> are sequentially grown by crystal growth. Next, a resist mask 5 of 25mumphi is formed, and mesa etching is performed halfway in the N-type InP layer 2. After the resist mask is removed, the second crystal growing buries the circular mesa. The burying layer is made of non-doped N-type InP 6, having a carrier density of 3X10<15>cm<-3>, and buries it so as to plane the surface. next, on the N-type InP layer 6 excepting the top of the circular mesa, an insulating film 7 is formed, and then a P-side electrode 8 and an N-side electrode 9 are formed. |
