发明名称 Pin lift plasma processing.
摘要 <p>A wafer is supported on pins within a plasma reactor, allowing the plasma to act on both sides of the wafer. Various processes are disclosed for pins-up and pins-down condition. If conductive pins are used, they are preferably flattened. The wafer is preferably biased negatively with respect to the plasma.</p>
申请公布号 EP0205142(A2) 申请公布日期 1986.12.17
申请号 EP19860107855 申请日期 1986.06.09
申请人 TEGAL CORPORATION 发明人 BITHELL, ROGER MARK;SLOMOWITZ, HARRY
分类号 H01L21/205;H01L21/302;H01L21/3065;H01L21/31;H01L21/677;(IPC1-7):H01J37/20 主分类号 H01L21/205
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