| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method of the same, which can achieve a normally-off operation while inhibiting current collapse.SOLUTION: A compound semiconductor device includes: an electron transit layer 3; a nitride semiconductor layer which is provided above the electron transit layer 3 and includes an electron supply layer 5 and an In-containing layer 6; and a gate electrode 11g, a source electrode 11s and a drain electrode 11d which are provided above the nitride semiconductor layer. The nitride semiconductor layer has a region having a smaller In composition than a region which contacts the electron transit layer 3 in a region located between the gate electrode 11g and the source electrode 11s, and in a region located between the gate electrode 11g and the drain electrode 11d in plan view.SELECTED DRAWING: Figure 1A |
