| 摘要 |
PURPOSE:To make it possible to obtain photoelectric conversion cells having desired spectral sensitivities, by providing at least two or more photoelectric conversion cells at positions, where photoelectric conversion regions, which mainly generate carriers to be stored in a control electrode region, are located at different depths. CONSTITUTION:On an n-type silicon substrate 1, three optical sensor cells 201, 301 and 401 constituting one picture element are formed. The spectral sensitivity of each optical sensor cell depends on the depth caused by the transmittance of light for silicon. The light having a long wavelength penetrates more deeply in a visible light region. Therefore, the photoelectric conversion regions having high photoelectric conversion efficiency are provided in the various depths. The photoelectric conversion efficiency in other regions is suppressed to a lower value. Thus, the optical sensor cells having different spectral sensitivities can be readily formed. By utilizing this property, the optical sensor cell 201 is used as a green-signal outputting cell; the optical sensor cell 301 is formed as a blue-signal outputting cell; and the optical sensor cell 401 is formed as a red-signal outputting cell. |
