ANNEALING PROCESS OF GAAS WAFER

摘要

PURPOSE:To obtain sufficient effect for preventing wafer surface from being roughened with less flow rate of AsH3 by using solid GaAs placed at upstream side of a GaAs wafer as catalyst for decomposing AsH3. CONSTITUTION:Solid GaAs 5 mounted on a supporting base 6 is placed at the upstream side of a GaAs wafer 1 which is set on a wafer supporting base 2 in a reaction tube 3. Said GaAs wafer 1 is annealed in the atmosphere of gas stream contg. a constitutional element of the wafer 1 or a compd. of the constitution element (e.g. AsH3). Thermal decomposition of gaseous AsH3 intro duced into the reaction tube 3 is accelerated by the solid GaAs 5, so higher As pressure than conventional process exerts on the surface of the GaAs wafer 1. Therefore, elimination of As atoms from the surface of the wafer 1 is retarded. Thus, roughening of the wafer surface and deterioration of characteristics of an ion implanted layer are prevented.