| 摘要 |
PURPOSE:To obtain a large-area single crystal film by forming a single crystal silicon through gas phase epitaxial growth in the exposed area of a single crystal substrate and utilizing it as a seed of crystal growth. CONSTITUTION:After forming an oxide film 2 in the thickness of 1mum by the ordinary LOCOS oxidation method to a part on the single crystal silicon 100 substrate, an epitaxial layer 3 is formed selectively in the thickness of 0.8mum only to the exposed area of the single crystal substrate 1 using thermal decomposition of SiH2Cl2. Moreover, after forming the amorphous silicon film 4 in the thickness of 0.3mum on the entire surface by the molecular beam vacuum- deposition method of Si, the substrate is annealed by N2 within the an electric furnace. The single crystal growth advances from the surface of the selective epitaxial layer 3 through the annealing by N2 and the single crystal region of 10mum from the stepped part of insulation film has been obtained before a polycrystal film is formed on the insulation film.
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