发明名称 |
Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device |
摘要 |
The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).
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申请公布号 |
US2005112498(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20050028456 |
申请日期 |
2005.01.03 |
申请人 |
TOYKO OHKA KOGYO CO., LTD. |
发明人 |
NITTA KAZUYUKI;MIMURA TAKEYOSHI;SHIMATANI SATOSHI;OKUBO WAKI;MATSUMI TATSUYA |
分类号 |
G03F7/039;G03F7/11;(IPC1-7):G03C1/76 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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