| 摘要 |
PURPOSE:To improve the electrostatic charging capacity by forming a blocking layer of amorphous Si, a carrier generating layer contg. microcrystalline Si as the principal component and a carrier transferring layer of amorphous Si on an electrically conductive support. CONSTITUTION:A blocking layer 24a, a carrier transferring layer 24b, a carrier generating layer 24c and a surface layer 24e are successively formed on an electrically conductive drum-shaped substrate 12. The blocking layer 24a is made of amorphous Si contg. a group III or V element in the periodic table and/or one or more kinds of atoms selected among C, O and N. The carrier generating layer 24c contains microcrystalline Si besides amorphous Si having the same composition as the amorphous Si forming the blocking layer 24a. The carrier transferring layer 24b is made of amorphous Si having the same composition as the amorphous Si forming the blocking layer 24a. Thus, a product having superior heat and moisture resistances, high mechanical strength and satisfactory electrostatic charging performance and harmless to the human body can be produced. |
