发明名称 WIRING STRUCTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To decrease a current density, by forming a recess part directly below a wiring layer, embedding a conducting layer in the recess part, forming a unitary body by the conducting layer and the wiring layer, thereby increasing the substantial cross sectional area. CONSTITUTION:A wiring layer 15 is extended on an element isolating insulating film 13 having large thickness as a wiring for a power source. A recess part 16 is formed in a part of the upper surface of the insulating film 13 directly beneath the wiring layer 15. The same metal as that of the wiring layer 15 is embedded in the recess part 16. Then, a metal layer 17 is formed. A unitary body is formed by the metal layer 17 and the wiring layer 15. Thus, the cross sectional area of the wiring layer 15 is increased by the cross sectional area of the metal layer 17. Therefore, the current density is decreased.
申请公布号 JPS61279151(A) 申请公布日期 1986.12.09
申请号 JP19850121099 申请日期 1985.06.04
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 HARAYAMA MASAHIRO
分类号 H01L21/3205;H01L21/768;H01L23/52;H01L23/522 主分类号 H01L21/3205
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