| 摘要 |
<p>PURPOSE:To obtain remarkably high photo-sensitivity even in a long-wave length range, and to acquire an a-Si film having extremely small defect density by constituting an amorphous silicon film from amorphous silicon using silicon containing at least one of hydrogen or halogen as a parent body and bringing photo-sensitivity at a specific wavelength to a specific value or more. CONSTITUTION:An amorphous silicon film is constituted from a-Si employing silicon containing at least one of hydrogen or halogen as a parent body, and an a-Si film, photo-sensitivity thereof at 780nm extends over 0.1erg/cm<2> or more, is formed. An electrode 1 and/or an electrode 2 having opening sections, which can be ventilated, are adopted. When a wire gauze is used, a particularly preferable range extends over 1-30 meshes. That is, sensitivity in a visible range is maintained comparatively high but photo-sensitivity in a long-wave length range is to some extent lowered when the particularly preferable range exceeds 100 meshes, and sensitivity in the long-wave range is kept comparatively high but sensitivity in the visible range is deteriorated when the range is less than 0.5 meshes, thus bringing an undesirable state.</p> |
