发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent delay in the switching speed time even when noise is impressed to an output terminal by connecting a Schottky diode between a collector and the output terminal of other transistor (TR) operated in response to the operating state of a TR. CONSTITUTION:The Schottky barrier diode 14 blocks a current flowing from the collector of a TR 4 to an output terminal 5 because the potential at the output terminal 5 is lower than a low potential point potential due to the effect of noise. Thus, the nonconductive state of the TR 4 due to the potential drop at the outputer terminal 5 is eliminated and the conductive/nonconductive state of a TR 1 depends on a signal potential and a sum of base-emitter voltages of TRs 1, 4a with respect to a potential of the point 6. Even when the potential at the output terminal 5 is lower than the potential at a low potential point 6 when the signal changes from H to L, the TR 1 changes quickly from the conductive into the nonconductive state so as to eliminate the delay in the switching speed time as the circuit.
申请公布号 JPS61276426(A) 申请公布日期 1986.12.06
申请号 JP19850119047 申请日期 1985.05.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKI YOICHIRO
分类号 H03K19/088 主分类号 H03K19/088
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