| 摘要 |
PURPOSE:To perform the dryetching process while improving the ionization efficiency by a method wherein opposing flat plate electrodes are connected to a high frequency power supply so that both electrodes may become cathodes while the supplied high frequency is provided with the phase difference of 180 deg.. CONSTITUTION:Flat plate electrodes 2, 3 are opposingly provided in a vacuum chamber 1 to be supplied with high frequency power for etching substrates 5. At this time, the electrodes 2, 3 are connected to a high frequency power supply 6 so that both electrodes 2, 3 may become cathodes. The high frequency power to be supplied to the electrodes 2, 3 is provided with the phase difference of 180 deg.. Said electrodes 2, 3 are closely arranged for the sake of holocathode discharge. Resultantly plasma discharge at high concentration can be effected without increasing power consumption to improve the ionization efficiency. Through these procedures, the dry-etching process with less pollution can be performed. |
