| 摘要 |
PURPOSE:To remove leakage currents among injection electrodes by insulating and isolating a plurality of the injection electrodes. CONSTITUTION:An N-type clad layer 102, an active layer 103 and a P-type clad layer 104 are laminated on a semiconductor substrate 101, such as a GaAs substrate, an InP substrate or the like, thus constituting double-hetero structure. An N-type region 105 is formed adjacent to the layer 104, thus organizing a P-N junction. An N-type buffer layer 106 and an insulating film 107 are shaped onto the P-N junction, and P-type regions 109 as contact sections with a plurality of injection electrodes 108 are formed. Consequently, the electrodes 108 are insulated and isolated by the P-N junction shaped by the P-type clad layer 104 and the N-type region 105. Accordingly, leakage currents flowing between the injection electrodes are removed completely. |
