| 摘要 |
PURPOSE:To improve the evenness of FET characteristics in a wafer surface by a method wherein, after forming a thin film with openings on the positions respectively to form a source region, a drain region and a gate region on a semiconductor, the source region, the drain region and the gate region are formed through the openings. CONSTITUTION:An SiO2 thin film 3 is formed on a semiconductor GaAs substrate 1 whereon an N-type layer 2 is formed and then openings 4, 5, 6 are formed at the positions respectively to form a gate electrode, a source region and a drain region. At this time, these openings are simultaneously formed by photolithography using only one mask. Next when impurity such as ion is implanted after covering the opening 4 with a photoresist 7, GaAs below the openings 5, 6 become N<+> region respectively to form a source region 8 and a drain region 9. After heat treatment for activating implanted layers, a source electrode 10 and a drain electrode 11 are formed and finally a gate electrode 14 is formed over the opening 14. |
