| 发明名称 |
PROCESS USING PLASMA FOR FORMING CONDUCTIVE THROUGH- HOLES THROUGH A DIELECTRIC LAYER |
| 摘要 |
<p>TITLE PROCESS USING PLASMA FOR FORMING CONDUCTIVE THROUGH-HOLES THROUGH A DIELECTRIC LAYER A conductive through-hole is formed by plasma etching a hole completely through a dielectric sandwiched between conductors and by deforming at least one conductor which has been undercut during the etching.</p> |
| 申请公布号 |
CA1214570(A) |
申请公布日期 |
1986.11.25 |
| 申请号 |
CA19840469287 |
申请日期 |
1984.12.04 |
| 申请人 |
DU PONT (E.I.) DE NEMOURS AND COMPANY |
发明人 |
JOHNSON, DANIEL D. |
| 分类号 |
H05K3/00;H05K3/40;(IPC1-7):H05K3/46 |
主分类号 |
H05K3/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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