| 发明名称 |
POLYCIDE PROCESS IN SEMICONDUCTOR FABRICATION |
| 摘要 |
<p>Polycide structures (13, 14) using metal silicides are known to be prone to lifting and blistering of the silicides (14) layer. This problem is overcome according to the invention by precise control of the polysilicon (13) impurity level. That control may be exercised during deposition or formation of the silicide, or by thermal treatment of the silicide after deposition.</p> |
| 申请公布号 |
WO8606877(A1) |
申请公布日期 |
1986.11.20 |
| 申请号 |
WO1986US00816 |
申请日期 |
1986.04.16 |
| 申请人 |
AMERICAN TELEPHONE &, TELEGRAPH COMPANY |
发明人 |
MANOCHA, AJIT, SINGH;MAURY, ALVARO;SINHA, ASHOK, KUMAR |
| 分类号 |
H01L21/3205;H01L21/28;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L23/52;H01L21/90;H01L23/48 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
