| 摘要 |
PURPOSE:To obtain a positive type photoresist compsn. to be prevented from precipitation of a positive type photosensitive compd., and good in storage stability and coating performance on a wafer by using a combination of 2 org. solvent components of one having a b.p. of 180-220 deg.C and a dissolution parameter of 11-12 and the other having a b.p. of 120-180 deg.C. CONSTITUTION:The positive type photosensitive compd. having a quinonediazido group and a coat-forming material are dissolved in the org. solvent mixture contg. the solvent (A) having a b.p. of 180-220 deg.C and a dissolution parameter of 11-12, preferably, such as pyrrolidone or sulfoxide, and the solvent (B) having a b.p. of 120-180 deg.C, such as glycol ethers, e.g., diethoxyethane or methyl cellosolve, to prepare a positive type photoresist composition. |
