| 摘要 |
PURPOSE:To prevent the damage of storage information without almost change in charge amount stored in a capacitor even if electron and hole pair are generated by forming a recess on the surface of a semiconductor substrate, accumulating an insulating film and the first conductive type semiconductor layer on the inner surface of the recess to form the capacitor, thereby emitting an alpha- ray in the substrate incident thereto. CONSTITUTION:A recess is formed on the surface of a silicon single crystal substrate 1, and an insulating film 3 is grown on the surface of the substrate 1 and on the inner surface in the recess. Then, the first N<+> type polycrystalline silicon layer 4, a P-type polycrystalline silicon layer 5, the second N<+> type polycrystalline silicon layer 6 are sequentially acumulated on the surface of the film 3. Then, the films 3 to be removed in the recess and the layer 4-6 are removed. Then, after a thermal oxide film 7 is grown on the surface exposed with the surface side of the substrate of the layers 4-6, the layers 4, 6 are used as source and drain regions, a polycrystalline silicon film 8 to serve as a gate electrode is accumulated on the film 7 so that the portion adjacent to the film 7 is used as a channel region to form an MOS transistor, phosphorus is diffused therein, and the desired shape is formed. |
