| 摘要 |
PURPOSE:To improve heat radiation characteristic of a semiconductor substrate by forming a diamond film through the growth on the surface of substrate mother material which is deposited by forming a metal layer on a compound semiconductor. CONSTITUTION:A W layer 2 for electrode is formed by vacuum deposited method on an N-GaAs substrate 1 and moreover a diamond film 3 is deposited by the CVD method on the layer 2. Next, after such laminated material is cut into the square form, the N-AlGaAs clad layer 4, GaAs active layer 5, P-AlGaAs clad layer 6 and a PGaAs contact layer 7 are sequentially laminated by the MOCVD method to the area on the opposite side to the surface of substrate 1 where the layer 2 and film 3 are formed. Moreover, an Au-Cr electrode layer 8 is formed thereon by the vacuum deposition method and thereby a semiconductor laser of the double hetero junction structure can be obtained. |
