发明名称 STRUCTURE OF SEMICONDUCTOR RESISTOR DEVICE
摘要 PURPOSE:To completely remove the electrical effect of a wiring line on a resistor element region crossed by the wiring line by partially lengthening a part of another wiring line on an insulating film to thereby providing a shielding portion covering the resistor element region. CONSTITUTION:A resistor element region 4 is formed on a semiconductor sub strate and an insulating film 5 is laminated on the region 4. Wiring lines 7 and 8 are formed which are connected to the resistor element region 4. At this time, the wiring lines 7 and 8 are so formed as to cover the resistor element region 4 after the lines 7 and 8 passes through a contact window 6 and a shielding portion 10 is formed on the insulating film 5 in a direction reverse to that in which the wiring lines 7 and 8 are led out. Therefore, a signal passing through the wiring line 9 scarcely affects the resistor element forming region 4 due to the presence of the shielding portion 10.
申请公布号 JPS61251162(A) 申请公布日期 1986.11.08
申请号 JP19850094405 申请日期 1985.04.30
申请人 FUJITSU LTD 发明人 TANAKA HIROKAZU;ISHIKAWA TAMOTSU
分类号 H01L27/04;H01L21/822 主分类号 H01L27/04
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