| 摘要 |
PURPOSE:To arrange many semiconductor lasers, which can be independently driven, on the same semiconductor substrate, by forming grooves in a current block layer on an active layer, and forming isolating grooves reaching the current block layer from the surface of a crystal. CONSTITUTION:On an n-type GaAs substrate 1, an n-type Al0.4Ga0.6As layer 2, an n-type Al0.11Ga0.89As layer 3 that is to become an active layer, a p-type Al0.4Ga0.6As layer 4 and an n-type GaAs layer 5 that is to become a current block layer are sequentially formed. Thereafter, a groove 9' is formed from the surface of a crystal to the layer 4. Then, a p-type AlGaAs layer 6 and a p-type GaAs layer 7 are sequentially formed on the entire surface of the crystal. Thereafter, a p-type ohmic electrode 8, an isolating groove 9 reaching the layer 5 from the crystal surface and an n-type ohmic electrode 10 are formed. Thus, semiconductor lasers A and B can be driven electrically independently. Since the bottom of the groove 9 is positioned on the upper surface of the layer 5 and sufficiently separated from the layer 3, occurrence of transversal irregular streaks on the layer 5, when the crystal is cleaved, can be avoided. |
