| 摘要 |
PURPOSE:To easily obtain a semiconductor having high resistance and superior thermal stability by carrying out the growth of a Group III-V compound semiconductor by adding oxygen to the vapor phase during the growth maintaining the Group III/V ratio at a larger value than the Group III/V ratio for the maximum growth rate. CONSTITUTION:Gaseous H2 2 contg. vapor of an organo Group III metal compd. (e.g. trimethyl gallium) and gaseous H23 contg. vapor of a Group V metal chloride (e.g. AsCl3), are introduced into a hot wall type reaction tube 5 heated by an electric furnace 4. Thus, a Group III-V compound semiconductor (e.g. GaAs) is grown epitaxially on a substrate 6 heated at a specified temp. In this stage, the growth is proceeded at a Group III/V ratio larger than the Group III/V for the max. growth rate is adopted and O2 is added to gaseous H2 stream 3. Thus, a Group III-V compound semiconductor having high resistivity being suited to the use for integrated circuit is obtd.
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