发明名称 DEPOSITION FILM FORMING METHOD
摘要 PURPOSE:To increase extremely consumption efficiency of the material gas which is used when an active species is produced in an activation space, by applying the catalyst selected from Ta and Pt when the precursor and/or the active species are produced in the activation space A and/or the activation space B. CONSTITUTION:After the base body 103 made of polyethylene terephthalate film is mounted on the supporting stand 102 and the film-forming chamber 101 is exhausted, tantalum 125 as the catalyst is supplied with current and brought into the state of red heat. The H2 gas or the H2 gas mixed with PH3 or B2H6 is introduced into the activation chamber 123. The introduced H2 gas, etc. are activated by the red hot tantalum 125 to change into the active hydro gen, etc. and introduced into the film-forming chamber 101. On the other hand, the activation chamber 112 is filled with solid Si particles 114 which are heated to the red hot state of Si. Then,, the SiF4 gas is blown into the chamber and the SiF2* as the precursor is produced, which is introduced into the film-forming chamber 101. In this state, the non-doped or the doped a-Si(H,X) film is formed.
申请公布号 JPS61247020(A) 申请公布日期 1986.11.04
申请号 JP19850087835 申请日期 1985.04.24
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;UEKI MASAO;KANAI MASAHIRO
分类号 C23C16/24;G03G5/08;H01L21/205;H01L31/04 主分类号 C23C16/24
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