| 摘要 |
PURPOSE:To decrease a collector-base capacity and improve gain, by mounting an auxiliary emitter electrode, which is electrically connected with an emitter electrode having nearly the same area as that of a base bonding electrode, through an insulating film just under the base bonding electrode. CONSTITUTION:Both areas of a base and an emitter in a transistor are formed on one surface side of a semiconductor substrate 1, with an emitter electrode 2 and a base electrode 4 on them, and a collector electrode is formed on the other surface side of the substrate 1. An auxiliary emitter electrode 3, which is connected through a conduction path surrounding the periphery of the base electrode 4, is formed in nearly the same area as a base bonding electrode 7 formed later. Next, after forming an insulating film all over the surface, the base bonding electrode 7 connected with the base electrode 4 through an openting 6 is formed on the auxiliary emitter electrode 3, with the insulating film being put between them. Thus, MOS capacity between the base bonding electrode and the collector area can be made to approximate to zero, with gain at high frequency being enlarged.
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