发明名称 |
Multiple quantum-well infrared detector |
摘要 |
Alternating layers of N+ GaAs (80 ANGSTROM ) and N+ Ga1-xAlxAs (300 ANGSTROM ), all heavily doped with a uniform flux of Sn, and biased by 2V, provide a multiple quantum-well heterojunction structure for infrared detection with cutoff wavelength established by the choice of the value x which defines the depth of the wells. Fine tuning of the cutoff wavelength may be achieved by varying the bias voltage. By biasing the individual quantum-well layers progressively through a voltage divider, an avalanche mechanism may be achieved in the detector for signal amplification. The detectors may be fabricated in large two-dimensional arrays.
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申请公布号 |
US4620214(A) |
申请公布日期 |
1986.10.28 |
申请号 |
US19830557594 |
申请日期 |
1983.12.02 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
MARGALIT, SHLOMO;CHIU, LIEW-CHUANG;SMITH, JOHN S.;YARIV, AMNON |
分类号 |
H01L31/0352;H01L31/101;(IPC1-7):H01L29/167;H01L27/14 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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