| 摘要 |
PURPOSE:To produce the title growing apparatus making it feasible to use a reactive vessel repeatedly as well as to enlarge the wafer size by a method wherein the reactive vessel of growing apparatus is additionally provided with a supplementary melt reservoir and a gas exhauster to maintain constant internal pressure inside the reactive vessel. CONSTITUTION:A reactor 14, a reacting part 4 and a supplementary melt reservoir 7 are opened respectively using slidably engaging parts 13, 3 and 6 to insert semiconductor mixture ingot respectively into a melt reservoir 2 and the supplementary melt reservoir 7 and after fixing a substrate to a semiconductor substrate fixing device 1, the reactor 14 and others are closed. When the reactor 14 is heated; hydrogen gas is fed to the reactor 14 from a reducing gas inlet 11; and the ingot is melted at high temperature, the substrate is brought into contact with the melt. Through these procedures, a bit of steam is exhausted through the intermediary of fine clearances 5, 8 while constant partial steam pressure ratio can be maintained inside the reactive part 4. |
