| 摘要 |
PURPOSE:To contrive the growth of a high-quality epitaxial layer by forming an intermediate layer on an Si substrate and an oxide layer on a part of the surface of the intermediate layer and by forming a local polycrystalline region in a III-V compound semiconductor layer. CONSTITUTION:A single-crystallized Ge layer 2 is formed on a single crystal Si substrate 1 and after a GeO2 film is formed by thermally oxidizing the surface of the obtained single-crystallized Ge layer 2, a desired GeO2 pattern 3 is formed by using photo-lithography technique. A GaAs layer 4 is grown on the Ge layer 2 and the GeO2 pattern 3 and after the growth, appropriately annealed and many polycrystalline nuclei are contained in the GaAs layer 4b formed on the upper part 3a and the peripheral part 3b of the GeO2 pattern 3. This enables to obtain a high-quality compound semiconductor device by releasing the thermal stress due to the difference of a thermal expansion coefficient and to remove the mismatching of a lattice constant. |
