| 摘要 |
PURPOSE:To prevent metal wirings from being disconnected at the step part of a contacting hole by inclining the side of the hole by a heat treatment of low temperature, smoothing the step. CONSTITUTION:A phosphorus glass layer 3 is coated as an interlayer insulating film on a semiconductor substrate 1 formed with a diffused layer. The layer 3 is etched by a dry etching method to form an electrode producing contacting hole. Then, an impurity 8 is implanted to the layer 3 and the exposed part of the substrate by an ion implanting method with a resist 7 as a mask. Thus, when a high temperature impurity region is formed, the layer 3 can be reflowed by the heat treatment in enzyme or nitrogen atmosphere of 900-1,000 deg.C of lower temperature than the conventional one. |
