Thin film transistor using polycrystalline silicon.

摘要

A thin film field effect transistor using a thin polycrystalline silicon film formed on an insulating substrate (11) is disclosed in which the thin polycrystalline silicon film is made up of a high-resistance polycrystalline silicon layer (12) disposed on the insulating substrate and a low-resistance polycrystalline silicon layer (13) formed on the high-resistance polycrystalline silicon layer (12) and source and drain electrodes (17a, 17b) are kept in ohmic contact with the low-resistance polycrystalline silicon layer (13).