| 摘要 |
PURPOSE:To improve various characteristics of a baking treated material by controlling a heating profile in a course of heating with a good accuracy, thereby enabling to a rapid heating, or by controlling a cooling profile in a course of cooling with a good accuracy, thereby enabling to a rapid cooling. CONSTITUTION:When a cooling plate (A) 15 and a cooling plate (B) 28 are set at a prescribed temp., a semiconductor wafer 1 is set on the cooling plate (A) 15, and is cooled to a prescribed cooling temp. And then, the wafer 1 is supplied to the heating part 5, and is rotated with a prescribed revolving speed, and at the same time, is irradiated a microwave to the wafer from a microwave generating device 22, thereby heating the wafer 1. When the baking treatment is given to a resin film 2 coated on the wafer 1, the microwave is cut, and the wafer 1 is cooled according to the prescribed cooling temp. profile, measuring the temp. of the wafer 1 with a monitor 23. The wafer 1 is further cooled on the cooling plate (B) 28 with the prescribed temp. profile, thereby completing a cure-baking of the resin film 2, and improving the various characteristic properties of the material to be treated. |
