| 摘要 |
PURPOSE:To facilitate the integration and to reduce the size of an integrated circuit by bending the gate electrode of an FET at 90 deg., thereby eliminating the gate azimuth dependency of a threshold voltage. CONSTITUTION:A Schottky gate electrode 21, a source electrode 22 and a drain electrode 23 are formed on a GaAs substrate. The electrode 21 is bent at a right angle at the bend portion 24, and the lengths of the extensions of two directions are preferably equal. When the gate electrodes of FETs are formed in two perpendicular directions in this manner, the gates which have equal best and worst azimuths are formed. Accordingly, the azimuth dependency can be eliminated, and it is advantageous when applied to an FET having a large gate width. |
