发明名称 |
ELECTROLESS COPPER DEPOSITION SOLUTIONS |
摘要 |
Suitably complexed cupric solutions can deposit conductive copper films electrolessly on properly catalyzed non-conductive substrates, at plating bath pH values in the range of about 2.0 to 3.5, using a non-formaldehyde reducer such as hypophosphite. Certain conditions are critical to successful results: (1) ability of the complexer selected to chelate copper at pH values of 2.0 to 3.5 at elevated temperatures (140<o> to 160<o>F); (2) avoidance of certain anions, such as halides and acetates, in significant concentrations in the plating solution; and (3) provision of an "active" catalytic surface on the non-conductive substrate. |
申请公布号 |
DE3175316(D1) |
申请公布日期 |
1986.10.16 |
申请号 |
DE19813175316 |
申请日期 |
1981.12.21 |
申请人 |
MACDERMID, INCORPORATED |
发明人 |
FERRIER, DONALD R.;RHODENIZER, HAROLD L.;KUKANSKIS, PETER E.;GRUNWALD, JOHN 1 |
分类号 |
H05K3/18;C23C18/40;(IPC1-7):C23C18/54 |
主分类号 |
H05K3/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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