| 摘要 |
PURPOSE:To suppress the remarkable reduction in a gate insulating withstand voltage by interposing a thin silicon nitride film so as not to react fluorine and high melting point metal with a gate insulating film. CONSTITUTION:A gate electrode made of two layers laminated with a polycrystalline silicon film 2 and a tungsten silicide film 3 is formed on a gate insulating film made of a silicon dioxide film 1. A silicon nitride film 10 is formed on the film 1. With this structure, even if it is heated to 1,000 deg.C by heat treating in the manufacturing steps, the film 1 is not reacted with fluorine and tungsten, but stopped by the film 10 to maintain the gate insulating withstand voltage. |
