| 摘要 |
The gate to source voltage of a MESFET (10) is increased by connecting a diode (22) therebetween. The diode is placed in a conductive path (20, 22) connecting the drain and source and allows substantial current to flow only towards the source. The conductive path may include other diodes (28, 57, 66, 68) connected in series between the gate (18) and drain region (14, 44). The bootstrap gate to source voltage increases the drain to source current (Fig. 2). |
