| 摘要 |
PURPOSE:To enable to detect the endpoint of processing with the accuracy of 0.1 mum or less by a method wherein, when a processing work is performed by having an ion beam made to irradiate in focussed state on the material to be processed such as LSI and the like, said processing work is performed while the change of secondary ions to be sputtered is being detected from the material to be processed. CONSTITUTION:An ion beam 2 is led out by applying voltage between an ion source 1 and a lead-out electrode 3, the ion beam 2 is passed through the apertures of a blanking electrode 4, an aperture 5, a blanking electrode 6, an aperture 7 and a deflector electrode 8, and the ion beam 2 is made to irradiate on the material 9 to be processed which is placed on a table 10, and an ion etching is performed. According to this constitution, the secondary ion 18 to be sputtered is detected by a mass spectrometric analyzing device 19 from the material to be processed, the result of said detection is inputted into the main controller 23 through the intermediaries of a head amplifier 20 and an A/D transducer 22, the integrated value of a surface scanning is calculated by bringing the detected signal in synchronism with the deflection voltage of a deflector controller 14, and the end point of processing is decided. Subsequently, a blanking power source 17 is operated, and the beam 2 is shut off. |
