| 摘要 |
PURPOSE:To lower the resistance of high melting-point metallic silicide films on a polycrystalline silicon film and an silicon substrate in approximately the same extent by forming the first high melting-point metallic silicide film and the second high melting-point metallic silicide film in order to introduce a second conduction type impurity to the polycrystalline silicon film. CONSTITUTION:Polycrystalline silicon films 40 are shaped selectively through a conventional method, but an impurity such as phosphorus is not implanted to the polycrystalline silicon films 40. An silicon oxide film 6 is attached, side walls 60 are formed on the side sections of the polycrystalline silicon films 40 through an RIE method, a titanium film 7 is shaped, only sections in which titanium and silicon are in contact are reacted through annealing, and titanium silicide films 8 are formed. Only sections not reacted of the titanium film 7 are removed selectively, and the titanium silicide films 8 are annealed and the sheet resistance of the films 8 is lowered. The ions of a second conduction type impurity are implanted to an silicon substrate 1 in the lower sections of the titanium silicide films 8 while the second conduction impurity is also implanted to the polycrystalline silicon films 40.
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