发明名称 CONTACT-TYPE IMAGE SENSOR SUBSTRATE
摘要 PURPOSE:To make the titled substrate hard to be affected by external environment, by covering a part containing a light-detecting element with a film of light-transmitting resin having specified characteristics and thickness. CONSTITUTION:In amorphous Si 3, the electric resistance of a part to which a light transmitted through a light-transmitting resin film 5 and a common electrode 4 is applied diminishes sharply. Accordingly, a current flowing between a separate electrode 2 and the electrode 4 in said part varies sharply, and a light is detected therefrom. In Si 3 the light-detecting element is protected by the electrode 4 and the film 5. Moreover, a part not covered with a film of the electrode 4 in Si 3 is also protected by the film 5. In order to generate sufficient optical pumping carriers in Si 3, the transmittance of 90% or above of the visible light of wavelength 600nm is required from the film 5. Judging comprehensively from said necessary transmittance, the viscosity of usable resin, the resistance to environment, etc., the film thickness of the film 5 is limited to 1-200mum. A volume resistivity needs to be 10<14>OMEGAcm or above at the temperature of 25 deg.C in view of the driving of a sensor. According to this construction, a contact-type sensor substrate which is hard to be affected by external environment and with reliability can be obtained.
申请公布号 JPS61214564(A) 申请公布日期 1986.09.24
申请号 JP19850056408 申请日期 1985.03.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 NIKI KENICHI;HIDA TOSHIO;MAKITA TETSUO
分类号 H01L27/146;H01L31/0216;H01L31/09 主分类号 H01L27/146
代理机构 代理人
主权项
地址