| 摘要 |
PURPOSE:To form a semiconductor integrated circuit of finer rule by forming metal wirings of a composite metal film by a sputtering method and an electron beam depositing method. CONSTITUTION:After an aluminum layer 2 formed by a sputtering method is grown on a silicon wafer, it is not exposed with atmosphere, i.e., not contacted with oxygen gas, but an aluminum layer 3 is grown by an electron beam depositing method. Then, after the aluminum layer is selectively etched to form electrode wirings, it is heat treated at approx. 450 deg.C to grow aluminum flying metal particles, thereby forming stable aluminum wiring. |
