| 摘要 |
PURPOSE:To prevent contamination of the optically transparent member in the reaction chamber by flowing a reactive gas over the side of the material to be processed in the reaction chamber, and also passing a nonreactive gas over the surface side of the optically transparent member. CONSTITUTION:A semiconductor wafer 8 on which a thin film will be formed is so placed on the holding section 10 that the thin film forming side is directed to the reaction chamber 6, and the lid member 12 is mounted on the upper side 2 to realize a sealed state. Subsequently the light source 36 is driven to apply light to the heat storage member 18 via an optically transparent member 20 and keep the wafer 8 at a particular temperature. Then internal air of the chamber 6 is exhausted to introduce a reactive gas 64, first and second nonreactive gases 66, 68 into the chamber 6 and pass a laser light 93, followed by irradiation of the wafer 8 with light emitted from the light source 60. Then a particular thin film is formed on the surface of the wafer 8 as the result of the reaction of the gas 64 with the light 93 and the light emitted from the source 60. As the first nonreactive gas 66 passes at a high speed over the surface of the member 40, adhesion of dust to the surface of the member 40, which accompanies the photochemical vapor phase reaction, is inhibited and contamination is prevented. |
