发明名称 REACTIVE ION ETCHING EQUIPMENT
摘要 PURPOSE:To enable oblique etching, e.g., to enable tapering at the side of a via-hole by applying electromagnetic force which has the direction perpendicular to both the direction of a static magnetic field and the direction of ion movement to an ion which moves nearly perpendicular to the static magnetic field formed nearly in parallel with an object to be etched above the object. CONSTITUTION:An RIE equipment is divided into two by a cathode connected to a radio frequency A.C. power source 11, an upper etching chamber and a lower chamber where a motor 4 for rotating an object to be etched and an electromagnet 7 are provided. A high vacuum is kept in the lower chamber to prevent a discharge. An ion is given electromagnetic force by the intersection of an electric field E due to the self-bias voltage of the cathode and a magnetic field B generated by the electromagnet 7. The direction of the electromagnetic force is perpendicular to the electric field E and the magnetic field B. This makes the ion strike against the object 1 to be etched obliquely. By rotating the object 1 to be etched using the motor 4, the object can also be etched obliquely from all the directions.
申请公布号 JPS61204937(A) 申请公布日期 1986.09.11
申请号 JP19850044546 申请日期 1985.03.08
申请人 TOSHIBA CORP 发明人 YASAKA MAMORU
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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