| 摘要 |
PURPOSE:To provide an insulating film forming method suitable for manufacture of mainly InP field effect transistors and characterized by excellent interface characteristics of III-V compound semiconductors and capability of forming practical gate insulating film, by using phosphorus trichloride (PCl3) and ammonia (NH3) as materials for the insulating film, and specifying a film forming temperature. CONSTITUTION:In forming an insulating film including phosphorus as well as P3N5, phosphorus trichloride (PCl3) and ammonia (NH3) are used as raw materials, and a chemical vapor deposition method is used at a temperature region of 350-250 deg.C. When the film is made at a temperature lower than 250 deg.C, its insulating resistance is low and the film cannot be used as a gate insulating film, Meanwhile, at a temperature higher than 350 deg.C, thermal deterioration of the surface of a semiconductor cannot be avoided, and an accumulating layer cannot be formed on a P-type substrate. |
