| 摘要 |
PURPOSE:To deposite and form a film of high melting point metal on an insulation film consisting of silicon oxide or silicon nitride with good close contactness by providing a step for forming a polysilicon film on an oxide or nitride film and a step for using polysilicon as a reduction agent in the reduction reaction. CONSTITUTION:In the case of depositing a high melting point metal film by the CVD method from a gas of high melting point metal fluoride, hydrogen gas or silicon substrate is used as a reduction agent. A polysilicon layer 4 is deposited and formed on an insulation film 1 consisting of silicon oxide or silicon nitride formed at the surface of a silicon substrate 2. Next, the gas including high melting point metal fluride and the gas including hydrogen are supplied and thereby a film of high melting point metal is precipitated and deposited from the gas of high melting point metal fluoride by the CVD method. The polysilicon film 4 is perfectly consumed and lost by the reducing reduction and the high melting point metal film 3 grows further through reduction by hydrogen. |
