| 摘要 |
PURPOSE:To obtain element characteristic equivalent or larger than the conventional one even if a substrate of low density is used in a manufacture of a P-I-N type photodiode by forming high density diffused layers of the same conductive type as about 10mum of the depth on the overall surface of an N-type semiconductor wafer to become an N-type layer. CONSTITUTION:An N-type impurity high density diffused layer 13 is formed on the overall surface of a substrate 11. Then, an N-type epitaxial grown is performed at approx. 10mum. Then, a P-type diffused layer 14 is selectively formed to complete a photodiode of PIN structure. The feature of the manufacturing steps is to form a high density diffused layer 12 on the substrate before epitaxially growing to form a region having the same lifetime as the conventional high density substrate by the layer 12 directly under the layer 3 to become I-layer. |
